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| EMA110-130F UPDATED 08/10/2005 0.5 - 3.0 GHz High Linearity Power MMIC FEATURES * * * * * * * 0.5 - 3.0 GHz BANDWIDTH 27.0dBm TYPICAL OUTPUT POWER -45dBc OIMD3 @ 17dBm EACH TONE Pout 11.0 dB TYPICAL POWER GAIN SINGLE BIAS SUPPLY 100% DC TESTED Hermetic 130 mil Ceremic Flange Package Excelics EMA110 -130F DIMENSION: INCH ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL F P1dB Gss IMD3 RLIN RLOUT IDD RTH PARAMETER/TEST CONDITIONS1 Operating Frequency Range Power at 1dB Compression VDD = 8.0V, F = 2.4G Caution! ESD sensitive device. MIN 0.5 25.5 9.5 27.0 11.0 -45 -12 -12 190 240 36 -42 -6 -6 290 o TYP MAX 3.0 UNITS GHz dBm dB dBc dB dB mA C/W Small Signal Gain VDD = 8.0V, F = 2.4G rd Output 3 Order Intermodulation Distortion @f=10MHz, Each Tone Pout 17dBm VDD = 8.0V, F = 2.4G Input Return Loss Output Return Loss Drain Current Thermal Resistance1 VDD = 8.0V VDD = 8.0V Note: 1. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL VDD VGG IDD IGSF PIN PT TCH TSTG Gate Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature CHARACTERISTIC Power Supply Voltage VALUE 8V -3 V IDSS 10 mA @ 3dB compression 2.8 W 150C -65/+150C Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH -THS)/RTH; where THS = temperature of heatsink, and PT = (VDD * IDD) - (POUT - PIN). Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised August 2005 |
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